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CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. CHT2303PT CURRENT 1.9 Ampere FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability. 1.7~2.1 (2) (3) SC-59/SOT-346 0.95 2.7~3.1 0.95 (1) CONSTRUCTION * P-Channel Enhancement 0.3~0.51 1.2~1.9 0.89~1.3 0.085~0.2 0.3~0.6 2.1~2.95 1G 2S CIRCUIT 3 D 0~0.1 Dimensions in millimeters SC-59/SOT-346 Absolute Maximum Ratings Symbol Parameter TA = 25C unless otherwise noted CHT2303PT Units VDSS VGSS Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous -30 V V 20 -1.9 ID - Pulsed PD TJ TSTG Maximum Power Dissipation Operating Temperature Range Storage Temperature Range (Note 3) A 10 1250 -55 to 150 -55 to 150 mW C C Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1) 100 C/W 2005-02 RATING CHARACTERISTIC CURVES ( CHT2303PT ) Electrical Characteristics T Symbol Parameter A = 25C unless otherwise noted Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS I GSSF I GSSR Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Body Leakage VGS = 0 V, ID = -250 A VDS = -30 V, VGS = 0 V VGS = 20V,VDS = 0 V VGS = -20V, VDS = 0 V -30 -1 +100 -100 V A nA nA ON CHARACTERISTICS (Note 2) VGS(th) RDS(ON) g FS Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID =-250 A VGS=-10V, ID=-1.7A VGS=-4.5V, ID=-1.3A -1 150 230 2.4 -3 200 V m 320 S Forward Transconductance VDS =-10V, ID = -1.7A SWITCHING CHARACTERISTICS (Note 4) Qg Qgs Q tr toff tf gd Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Time Rise Time Turn-Off Time Fall Time VDS=-15V, ID=-1.7A VGS=-10V V DD= -15V ID = -1.0A , VGS = -10 V RGEN= 6 6.0 0.8 1.5 10 10 20 6 10 nC 20 20 35 20 nS ton DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD Drain-Source Diode Forward Current (Note 1) -1.25 -1.2 A V Drain-Source Diode Forward Voltage IS = -1.25A , VGS = 0 V (Note 2) RATING CHARACTERISTIC CURVES ( CHT2303PT ) Typical Electrical Characteristics Figure 1. Output Characteristics 10 -VGS=10,8,6V 10 25 C Figure 2. Transfer Characteristics -ID, Drain Current (A) 8 -VGS=5V 6 -ID, Drain Current (A) 8 6 4 -VGS=4V 4 2 0 0 2 4 6 -VGS=3V 2 TJ=125 C 0 -55 C 3 4 5 6 8 10 0 1 2 -VDS, Drain-to-Source Voltage (V) -VGS, Gate-to-Source Voltage (V) Figure 4. On-Resistance Variation with Temperature RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 ID=-1.7A VGS=-10V Figure 3. Capacitance 600 500 400 300 Ciss 200 100 0 0 5 10 15 20 25 Coss Crss C, Capacitance (pF) -50 0 50 100 150 200 -VDS, Drain-to-Source Voltage (V) Figure 5. Gate Threshold Variation with Temperature VTH, Normalized Gate-Source Threshold Voltage 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 ID=250A TJ, Junction Temperature( C) Figure 6. Body Diode Forward Voltage Variation with Source Current -IS, Source-drain current (A) VGS=0V 1 VDS=VGS 10 10 0 10 -25 0 25 50 75 100 125 150 -1 0.2 0.4 0.6 0.8 1.0 1.2 TJ, Junction Temperature( C) -VSD, Body Diode Forward Voltage (V) |
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